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Photovoltaics : new materials for better efficiency

Pere ROCA
Pere Roca i Cabarrocas
CNRS Research Director at LPICM* at École Polytechnique (IP Paris) and scientific director of Institut Photovoltaïque d'Île-de-France (IPVF)
Key takeaways
  • The global solar energy market today is 95% silicon-based – although, silicon is not actually the most ideal material for photovoltaic panels because it does not absorb light very well.
  • Researchers are looking at alternatives such as thin-film solar cell technology and perovskites.
  • Perovskites have now reached the same level of performance as silicon (with an energy conversion of more than 25%), but they are unstable, a problem that still needs to be resolved.
  • Photovoltaics in tandem (silicon and perovskites together) are promising since their efficiency can exceed 30%.

Solar pho­to­vol­taic (PV) tech­no­lo­gy has grown almost expo­nen­tial­ly over the past 15 years and is now cost-com­pe­ti­tive with fos­sil fuels. Remar­ka­bly, the under­lying PV struc­ture has remai­ned vir­tual­ly unchan­ged since its deve­lop­ment at Bell Labo­ra­to­ries in 1954. Indeed, modern solar cells are still based on a simple junc­tion bet­ween ‘n’ type (elec­tron-rich) sili­con and ‘p’ type (hole-rich) sili­con. The first solar cells conver­ted sun­light into elec­tri­ci­ty with an effi­cien­cy of about 5%, a figure that has soa­red to over 25% in recent years thanks to more sophis­ti­ca­ted cell desi­gn, name­ly the addi­tion of high­ly doped sili­con and anti-reflec­tion layers.

Although sili­con still accounts for about 95% of the glo­bal solar ener­gy mar­ket, it has one major draw­back : it does not absorb light very well. Large thi­ck­nesses of mate­rial – to the order of hun­dreds of microns – are the­re­fore requi­red. Since this is a long dis­tance for elec­trons to tra­vel, PV-grade sili­con must be high­ly crys­tal­line and very pure for the charge car­riers to effi­cient­ly pass through. Fabri­ca­ting such mate­rial is com­plex, howe­ver, and the­re­fore expensive.

Changing our approach to silicon

To reduce pro­duc­tion costs and the amount of mate­rial nee­ded, resear­chers have long been loo­king into alter­na­tive mate­rials. My team is focu­sing on thin-film solar cell tech­no­lo­gy, so-cal­led because the films only need to be a few microns thick for suf­fi­cient opti­cal absorp­tion. Lower qua­li­ty, lower puri­ty mate­rials are also accep­table and they can be fabri­ca­ted using rapid depo­si­tion methods : eva­po­ra­tion, direct-to-glass sput­te­ring or plas­ma enhan­ced che­mi­cal vapour depo­si­tion (PECVD). These mate­rials, which include hydro­ge­na­ted amor­phous sili­con, cad­mium tel­lu­ride (CdTe) and cop­per indium gal­lium sele­nide (CuIn1-xGax­Se2, or CIGS for short), make for very effi­cient cells and can be grown on any type of substrate.

The effi­cien­cy of solar cells that convert sun­light into elec­tri­ci­ty has increa­sed from 5% to 25% in recent years.

Today, crys­tal­line sili­con wafers are conven­tio­nal­ly fabri­ca­ted by dra­wing ingots and then cut­ting them into wafers about 180 µm thick. We are trying to break new ground in the way crys­tal­line sili­con is made by using new growth tech­niques that rely on low-tem­pe­ra­ture PECVD pro­cesses – that is, bet­ween 150 and 300 degrees Cel­sius. We are also using this tech­nique to make ‘III‑V’ mate­rials which, although wide­ly used in optoe­lec­tro­nics, are about 100 times more expen­sive than crys­tal­line sili­con. In the world of pho­to­vol­taics, costs must be redu­ced to com­pete with crys­tal­line silicon.

The stan­dard methods for crea­ting III‑V mate­rials are mole­cu­lar beam epi­taxy (MBE) and metal orga­nic che­mi­cal vapour decom­po­si­tion (MOCVD). These epi­taxial growth methods require ultra-high vacuum envi­ron­ments for MBE and high tem­pe­ra­tures (700‑1000°C) for MOCVD, making them expen­sive. The plas­ma depo­si­tion pro­cesses that we are deve­lo­ping at LPICMt in col­la­bo­ra­tion with the Ins­ti­tut Pho­to­vol­taïque d’Ile de France (IPVF) aim to reduce this cost. This is one of the last variables we have any control over as III‑V com­pounds are alrea­dy at the maxi­mum of their effi­cien­cy when it comes to conver­ting solar radia­tion into electricity.

Perovskites : a new material

Per­ovs­kites are ano­ther class of mate­rials we are wor­king on. These are crys­tal­line mate­rials with the struc­ture ABX3, where A is cae­sium, methy­lam­mo­nium (MA) or for­ma­mi­di­nium (FA), B is lead or tin and X is chlo­rine, bro­mine or iodine. They are pro­mi­sing can­di­dates for thin-film solar cells because they can absorb light over a wide range of wave­lengths of the solar spec­trum thanks to their tuneable elec­tro­nic band gaps 1. Charge car­riers (elec­trons and holes) can also dif­fuse qui­ck­ly and over long dis­tances. These pro­per­ties mean that per­ovs­kite solar cells now boast an ener­gy conver­sion effi­cien­cy of over 25%, put­ting their per­for­mance on a par with esta­bli­shed solar cell mate­rials such as sili­con, gal­lium arse­nide and cad­mium telluride.

While we know how to make them chea­ply and effi­cient­ly, the pro­blem is that per­ovs­kites contain natu­ral sur­face defects and suf­fer from struc­tu­ral changes known as ion migra­tion. Both of these fac­tors tend to make per­ovs­kite films uns­table and these insta­bi­li­ties become even more pro­noun­ced in the pre­sence of mois­ture and higher tem­pe­ra­tures. To improve their sta­bi­li­ty, we need to unders­tand these mate­rials and the inter­faces bet­ween the dif­ferent com­po­nents that make up the solar cell.

This will be a chal­lenge, but it is worth it, because per­ovs­kites are very ver­sa­tile : their optoe­lec­tro­nic pro­per­ties can be mani­pu­la­ted quite easi­ly by simple che­mi­cal modi­fi­ca­tions. Thanks to their incre­dible light absorp­tion capa­ci­ty, they can be used not only in solar cells, but also in light-emit­ting diodes and other elec­tro­nic appli­ca­tions. Research on per­ovs­kites is boo­ming and thou­sands of stu­dies are publi­shed eve­ry year.

Tandem cells 

The next ques­tion is : how do we go beyond cur­rent effi­cien­cies ? While opti­mi­sing mate­rials and inter­faces is cru­cial, per­ovs­kites can also be added to esta­bli­shed solar cell tech­no­lo­gies (such as sili­con) to build so-cal­led tan­dem solar cells. This is the sub­ject of research at the IPVF and it is an extre­me­ly inter­es­ting way to increase the ove­rall effi­cien­cy of devices. Sili­con-only- and per­ovs­kite-only cells can both achieve effi­cien­cies of 26%, but if you put them toge­ther you can push the effi­cien­cy to a higher value (to beyond 30%). Higher effi­cien­cies mean, for example, that you can cover a smal­ler area with your PV panel to get the same ener­gy out­put – in other words, it costs less.

Cells made sole­ly of sili­con or per­ovs­kite can achieve effi­cien­cies of 26%, but toge­ther this value can exceed 30%.

So, what are the best mate­rials ? If we are able to solve the sta­bi­li­ty of per­ovs­kites, they seem the most pro­mi­sing. III-Vs are also inter­es­ting, but we need to reduce their cost. To address cli­mate change, our chal­lenge is to deve­lop tera­watts of pho­to­vol­taic panels, which means manu­fac­tu­ring large quan­ti­ties of pho­to­vol­taic panels that require large ins­tal­la­tion areas. Increa­sing their effi­cien­cy while decrea­sing the thi­ck­ness of the cells is the best way to reduce the amount of mate­rial used.

There are also other pro­blems to be sol­ved, such as recy­cling the pho­to­vol­taic mate­rials and kee­ping them free of dust so that they can conti­nue to absorb solar radia­tion effi­cient­ly. We are wor­king on the eco-desi­gn of solar cells that can be recy­cled to reco­ver the consti­tuent mate­rials. Pho­to­vol­taic plants are in fact pre­cious metal ‘mines’. Per­ovs­kites also contain lead, which is toxic and could leach out of a cell in the event of floo­ding or fire. This aspect of PV tech­no­lo­gy is a research topic in itself and could be the sub­ject of a future article.

Interview by Isabelle Dumé 
1The ener­gy ranges bet­ween the valence band and the conduc­tion band where elec­tro­nic states are for­bid­den.

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